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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA483 DESCRIPTION *High Collector Current:: IC= -1.5A *Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) *Complement to Type 2SC783 APPLICATIONS *Power amplifier applications *Vertical output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A IE Emitter Current-Continuous Total Power Dissipation @ TC=25 Junction Temperature 1.5 A PC 20 W TJ 150 Tstg Storage Temperature Range -65~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA483 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 -150 V V(BR)CBO Collector-Base Breakdown Voltage IC= -0.5mA ; IE= 0 -150 V VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA B -1.8 V VBE(on) ICBO Base-Emitter On Voltage IC= -0.5A ; VCE= -10V VCB= -150V ; IE= 0 -1.8 V A A Collector Cutoff Current -100 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -100 hFE DC Current Gain IC= -0.1A ; VCE= -10V 30 240 fT Current-Gain--Bandwidth Product IC= -0.1A ; VCE= -10V 10 MHz COB Output Capacitance VCB= -10V; ftest= 1MHz 50 pF hFE-1 Classifications R 30-80 O 70-140 Y 120-240 isc Websitewww.iscsemi.cn 2 |
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